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| SOFT ORANGE 1. 2. 2.1 2.2 Item No.: 181282 This specification applies to AlInGaP / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy or Al Au alloy 3. Outlines (dimensions in microns) p-Electrode Epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 2,10 max 2,40 10 Unit V A mcd nm Luminous intensity * IV IF = 10 mA 65 dom. wavelength IF = 20 mA 605 D * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 181282
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